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dc.contributor.authorЛяшок, Л. В.ru
dc.contributor.authorВодолажченко, С. А.ru
dc.contributor.authorДерибо, С. Г.ru
dc.contributor.authorГомозов, В. П.ru
dc.identifier.citationИсследование физико-химических свойств пористого оксида ниобия [Текст] / Л. В. Ляшок, С. А. Водолажченко, С. Г. Дерибо, В. П. Гомозов // Promising materials and processes in applied electrochemistry – 2019 : monograph / ed.: V. Z. Barsukov, Yu. V. Borysenko, V. G. Khomenko, O. V. Linyucheva ; editor-in-chief V. Z. Barsukov. - Kyiv : KNUTD, 2019. - С.
dc.description.abstractSelf-organization of porous structures during electrochemical processing is most pronounced during the formation of porous anodic metal oxides (aluminum, titanium, tungsten, niobium, tantalum). Niobium foil with a thickness of 0.1 mm and a purity of 99.99% was used as a working electrode. For the formation of niobium oxides, 1 M H2SO4 solutions with the addition of HF (0.1 M; 0.25 M; 0.5 M; 1 M) Polarization studies were carried out on a P-45X potentiostat. in potentiodynamic mode. The reference electrode is saturated silver chloride. The magnitudes of the potentials are given relative to the normal hydrogen electrode. The morphology of the obtained coatings was studied using scanning electron microscopy using a JSM-7001F microscope. It is shown that the use of fluoride ion activator and electrolytes of different nature allows at the initial stage of anodizing to provide conditions for the formation of a anodic oxide film with different surface morphology.en
dc.subjectelectrochemical dissolutionen
dc.subjectanodic behavioren
dc.subjectporous niobium oxideen
dc.titleИсследование физико-химических свойств пористого оксида ниобияru
dc.title.alternativeStudy of physical and chemical properties of porous niobium oxide
local.contributor.altauthorLyashok, L. V.en
local.contributor.altauthorVodolazhchenko, S. A.en
local.contributor.altauthorDeribo, S. G.en
local.contributor.altauthorGomozov, V. P.en
local.sourcePromising materials and processes in applied electrochemistry – 2019uk
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